Effect of the growth conditions on the structural properties of CuInSe2 thin films obtained by the technique of close spaced vapor transport
Identifieur interne : 000E53 ( Main/Repository ); précédent : 000E52; suivant : 000E54Effect of the growth conditions on the structural properties of CuInSe2 thin films obtained by the technique of close spaced vapor transport
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Abstract
Thin films of polycrystalline CuInSe2 were deposited on Pyrex substrates using a simple system of close spaced vapor transport (CSVT). The used CSVT system is an open horizontal reactor, this does not require vacuum, a gas flow is enough. During the growth phase, the CSVT system is continuously crossed by argon gas. A study on the influence of the source temperature and the deposition duration on the structural properties of the deposited films is reported. Analyses by X-ray diffraction have shown that these films are polycrystalline and have a chalcopyrite structure. The preferential orientation of the (112) plane was obtained for the films deposited at 550 °C. From the X-ray spectra we calculated the lattice parameters a and c, the ratio c/a was found to be close to 2. The characterization of the deposited films by an energy dispersion spectrometer (EDS) has shown that their chemical composition is quasistoichiometric with a ratio Cu/In varying from 0.96 to 1.10. Analysis with a scanning electron microscope (SEM) of the deposited films surface has shown that those slightly rich in indium present a more homogeneous morphology and smaller crystallites sizes than the films slightly rich in copper. The measurement of the photoconductivity of the prepared compound has allowed us to determine the value of its gap at room temperature. It was found to be close to 0.99 eV.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of the growth conditions on the structural properties of CuInSe<sub>2</sub> thin films obtained by the technique of close spaced vapor transport</title><author><name sortKey="Chouia, F" uniqKey="Chouia F">F. Chouia</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Semiconductors, Department of Physics, University Badji Mokhtar</s1><s2>Annaba</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Annaba</wicri:noRegion></affiliation></author><author><name sortKey="Benhalima, O" uniqKey="Benhalima O">O. Benhalima</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Semiconductors, Department of Physics, University Badji Mokhtar</s1><s2>Annaba</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Annaba</wicri:noRegion></affiliation></author><author><name sortKey="Hadjoudja, B" uniqKey="Hadjoudja B">B. Hadjoudja</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Semiconductors, Department of Physics, University Badji Mokhtar</s1><s2>Annaba</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Annaba</wicri:noRegion></affiliation></author><author><name sortKey="Chouial, B" uniqKey="Chouial B">B. Chouial</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Semiconductors, Department of Physics, University Badji Mokhtar</s1><s2>Annaba</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Annaba</wicri:noRegion></affiliation></author><author><name sortKey="Mezghache, M" uniqKey="Mezghache M">M. Mezghache</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Semiconductors, Department of Physics, University Badji Mokhtar</s1><s2>Annaba</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Annaba</wicri:noRegion></affiliation></author><author><name sortKey="Chibani, A" uniqKey="Chibani A">A. Chibani</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Semiconductors, Department of Physics, University Badji Mokhtar</s1><s2>Annaba</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Annaba</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0325471</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0325471 INIST</idno><idno type="RBID">Pascal:13-0325471</idno><idno type="wicri:Area/Main/Corpus">000656</idno><idno type="wicri:Area/Main/Repository">000E53</idno></publicationStmt><seriesStmt><idno type="ISSN">0947-8396</idno><title level="j" type="abbreviated">Appl. phys., A Mater. sci. process. : (Print)</title><title level="j" type="main">Applied physics. A, Materials science & processing : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chalcopyrite</term><term>Chalcopyrite structure</term><term>Chemical composition</term><term>Energy dispersion</term><term>Lattice parameters</term><term>Polycrystals</term><term>Preferred orientation</term><term>Pyrex</term><term>Ternary compounds</term><term>Thin films</term><term>X-ray spectra</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Diffraction RX</term><term>Orientation préférentielle</term><term>Spectre RX</term><term>Paramètre cristallin</term><term>Dispersion énergie</term><term>Composition chimique</term><term>Composé ternaire</term><term>Chalcopyrite</term><term>Couche mince</term><term>Polycristal</term><term>Verre pyrex</term><term>Structure chalcopyrite</term><term>Cu In Se</term><term>CuInSe2</term><term>Séléniure de cuivre indium</term><term>8115</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thin films of polycrystalline CuInSe<sub>2</sub> were deposited on Pyrex substrates using a simple system of close spaced vapor transport (CSVT). The used CSVT system is an open horizontal reactor, this does not require vacuum, a gas flow is enough. During the growth phase, the CSVT system is continuously crossed by argon gas. A study on the influence of the source temperature and the deposition duration on the structural properties of the deposited films is reported. Analyses by X-ray diffraction have shown that these films are polycrystalline and have a chalcopyrite structure. The preferential orientation of the (112) plane was obtained for the films deposited at 550 °C. From the X-ray spectra we calculated the lattice parameters a and c, the ratio c/a was found to be close to 2. The characterization of the deposited films by an energy dispersion spectrometer (EDS) has shown that their chemical composition is quasistoichiometric with a ratio Cu/In varying from 0.96 to 1.10. Analysis with a scanning electron microscope (SEM) of the deposited films surface has shown that those slightly rich in indium present a more homogeneous morphology and smaller crystallites sizes than the films slightly rich in copper. The measurement of the photoconductivity of the prepared compound has allowed us to determine the value of its gap at room temperature. It was found to be close to 0.99 eV.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0947-8396</s0></fA01><fA03 i2="1"><s0>Appl. phys., A Mater. sci. process. : (Print)</s0></fA03><fA05><s2>111</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of the growth conditions on the structural properties of CuInSe<sub>2</sub> thin films obtained by the technique of close spaced vapor transport</s1></fA08><fA11 i1="01" i2="1"><s1>CHOUIA (F.)</s1></fA11><fA11 i1="02" i2="1"><s1>BENHALIMA (O.)</s1></fA11><fA11 i1="03" i2="1"><s1>HADJOUDJA (B.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHOUIAL (B.)</s1></fA11><fA11 i1="05" i2="1"><s1>MEZGHACHE (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>CHIBANI (A.)</s1></fA11><fA14 i1="01"><s1>Laboratory of Semiconductors, Department of Physics, University Badji Mokhtar</s1><s2>Annaba</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>1125-1129</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16194A</s2><s5>354000505180350210</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0325471</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics. A, Materials science & processing : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>Thin films of polycrystalline CuInSe<sub>2</sub> were deposited on Pyrex substrates using a simple system of close spaced vapor transport (CSVT). The used CSVT system is an open horizontal reactor, this does not require vacuum, a gas flow is enough. During the growth phase, the CSVT system is continuously crossed by argon gas. A study on the influence of the source temperature and the deposition duration on the structural properties of the deposited films is reported. Analyses by X-ray diffraction have shown that these films are polycrystalline and have a chalcopyrite structure. The preferential orientation of the (112) plane was obtained for the films deposited at 550 °C. From the X-ray spectra we calculated the lattice parameters a and c, the ratio c/a was found to be close to 2. The characterization of the deposited films by an energy dispersion spectrometer (EDS) has shown that their chemical composition is quasistoichiometric with a ratio Cu/In varying from 0.96 to 1.10. Analysis with a scanning electron microscope (SEM) of the deposited films surface has shown that those slightly rich in indium present a more homogeneous morphology and smaller crystallites sizes than the films slightly rich in copper. The measurement of the photoconductivity of the prepared compound has allowed us to determine the value of its gap at room temperature. It was found to be close to 0.99 eV.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>41</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>XRD</s0><s5>41</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Orientation préférentielle</s0><s5>42</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Preferred orientation</s0><s5>42</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Orientación preferencial</s0><s5>42</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Spectre RX</s0><s5>43</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>X-ray spectra</s0><s5>43</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Paramètre cristallin</s0><s5>44</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Lattice parameters</s0><s5>44</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Dispersion énergie</s0><s5>45</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Energy dispersion</s0><s5>45</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Dispersión energía</s0><s5>45</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Composition chimique</s0><s5>46</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Chemical composition</s0><s5>46</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>50</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>50</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>61</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>61</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Couche mince</s0><s5>63</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Thin films</s0><s5>63</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Polycristal</s0><s5>64</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Polycrystals</s0><s5>64</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Verre pyrex</s0><s5>65</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Pyrex</s0><s5>65</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Structure chalcopyrite</s0><s5>67</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Chalcopyrite structure</s0><s5>67</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Estructura calcopirita</s0><s5>67</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Cu In Se</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Séléniure de cuivre indium</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>8115</s0><s4>INC</s4><s5>85</s5></fC03><fN21><s1>308</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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